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The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) is a transistor used for amplifying or switching electronic signals. Although the MOSFET is a four-terminal device with source (S), gate (G), drain (D), and body (B) terminals ,the body (or substrate) of the MOSFET often is connected to the source terminal, making it a three-terminal device like other field-effect transistors.

In enhancement mode MOSFETs, a voltage drop across the oxide induces a conducting channel between the source and drain contacts via the field effect. The term "enhancement mode" refers to the increase of conductivity with increase in oxide field that adds carriers to the channel, also referred to as the inversion layer.

The n-type Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) consists of a source and a drain, two highly conducting n-type semiconductor regions which are isolated from the p-type substrate by reversed-biased p-n diodes.

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